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FDP20N50F / FDPF20N50FT N-Channel MOSFET
FDP20N50F / FDPF20N50FT
N-Channel MOSFET, FRFET
500V, 20A, 0.26 Features
* RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10A * Low gate charge ( Typ. 50nC) * Low Crss ( Typ. 27pF) * Fast reverse recovery switching of built-in diode * Fast switching * 100% avalanche tested * Improve dv/dt capability * RoHS compliant
UniFETTM
tm
October 2007
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G
G DS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 250 2.0 -55 to +150 300 -Continuous (TC = 25oC) 20 12.9 80 1110 20 25 4.5 38.5 0.3 FDP20N50F FDPF20N50FT 500 30 20* 12.9* 80* Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP20N50F 0.5 0.5 62.5 FDPF20N50FT 3.3 62.5
o
Units C/W
(c)2007 Fairchild Semiconductor Corporation FDP20N50F / FDPF20N50FT Rev. A1
1
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP20N50F FDPF20N50FT Device FDP20N50F FDPF20N50FT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V VDS = 500V, VGS = 0V 25oC 500 0.7 10 100 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 10A VDS = 20V, ID = 10A
(Note 4)
3.0 -
0.22 25
5.0 0.26 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 20A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5)
2550 350 27 50 14 20
3390 465 40 65 -
pF pF pF nC nC nC
-
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 20A RG = 25
(Note 4, 5)
-
45 120 100 60
100 250 210 130
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 20A VGS = 0V, ISD = 20A dIF/dt = 100A/s
(Note 4)
-
154 0.5
20 80 1.5 -
A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5mH, IAS = 20A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 20A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP20N50F / FDPF20N50FT Rev. A1
2
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
80
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
100
ID,Drain Current[A]
ID,Drain Current[A]
150 C 25 C
o
o
10
10
1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
0.3 0.1
1 10
20
*Notes: 1. VDS = 20V 2. 250s Pulse Test
1 VDS,Drain-Source Voltage[V]
4
5 6 7 VGS,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.5
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
400
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
0.4
100
150 C 25 C
o o
0.3
VGS = 10V VGS = 20V
10
0.2
0.1
*Note: TJ = 25 C
o
*Notes: 1. VGS = 0V
0
25 50 ID, Drain Current [A]
75
1 0.0
2. 250s Pulse Test
0.5 1.0 1.5 2.0 VSD, Body Diode Forward Voltage [V]
2.5
Figure 5. Capacitance Characteristics
6000
Coss
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 100V VDS = 250V VDS = 400V
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
4500 Capacitances [pF]
*Note: 1. VGS = 0V 2. f = 1MHz
8
6
3000
Ciss
4
1500
Crss
2
*Note: ID = 20A
0 0.1
1 10 VDS, Drain-Source Voltage [V]
50
0
0
10
20 30 40 50 Qg, Total Gate Charge [nC]
60
FDP20N50F / FDPF20N50FT Rev. A1
3
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. Maximum Safe Operating Area - FDP20N50F
200
100 1.1
10 s 100 s 1 ms 10 ms 100 ms Operation in This Area is Limited by R DS(on) DC
ID, Drain Current [A]
10
1.0
1
0.9
*Notes: 1. VGS = 0V 2. ID = 1mA
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.8 -100
0.01 200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
1
10 100 VDS, Drain-Source Voltage [V]
800
Figure 9. Maximum Safe Operating Area - FDPF20N50FT
200 100
40s 100s
Figure 10. Maximum Drain Current vs. Case Temperature
25
ID, Drain Current [A]
20 ID, Drain Current [A]
800
10
1ms 10ms
15
1
Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
0.1
DC
5
0.01
1
10 100 VDS, Drain-Source Voltage [V]
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve - FDP20N50F
1
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05 0.02
PDM
PD M t1 t2
t1
t2
o
0.01
0.01 single pulse
*Notes: 1. ZJC(t) = 0.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.002 -5 10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
FDP20N50F / FDPF20N50FT Rev. A1
4
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF20N50FT
5 Thermal Response [ZJC]
0.5
1
0.2 0.1 0.05
PDM t1 t2
o
0.1
0.02 0.01 Single pulse
*Notes: 1. ZJC(t) = 3.3 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.01 -4 10
10
-3
10 10 10 10 Rectangular Pulse Duration [sec]
-2
-1
0
1
10
2
10
3
FDP20N50F / FDPF20N50FT Rev. A1
5
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP20N50F / FDPF20N50FT Rev. A1
6
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP20N50F / FDPF20N50FT Rev. A1
7
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP20N50F / FDPF20N50FT Rev. A1
8
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
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FDP20N50F / FDPF20N50FT Rev. A1
9
FDP20N50F / FDPF20N50FT N-Channel MOSFET
TRADEMARKS
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FDP20N50F / FDPF20N50FT Rev. A1
10
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